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tisp3600f3, TISP3700F3 dual bidirectional thyristor overvoltage protectors product information 1 november 1997 - revised september 2000 copyright ? 2000, power innovations limited, uk information is current as of publication date. products conform to specifications in accordance with the terms of power innovations standard warranty. production processing does not necessarily include testing of all parameters. insulation overvoltage protection a bourns company ion-implanted breakdown region precise and stable voltage low voltage overshoot under surge rated for international surge wave shapes terminals t &g, r&g t & r device v drm v v (bo) v v drm v v (bo) v ?3600 420 600 840 1200 ?3700 500 700 1000 1400 wave shape standard i tsp a 2/10 gr-1089-core 190 8/20 iec 61000-4-5 175 10/160 fcc part 68 110 10/700 fcc part 68 itu-t k.20/21 70 10/560 fcc part 68 50 10/1000 gr-1089-core 45 description these devices are designed to limit overvoltages between systems and so protect their insulation. a single device can be used in two ways; as a 3-point protector or as a 2-point protector. in the 3-point mode, the g terminal is connected to the system protective ground and the r and t terminals are connected to the two conductors being protected. for the tisp3600f3, each conductor will have its voltage limited to 600 v from the protective ground. the maximum inter-conductor voltage will be limited to 1200 v. in the 2-point mode, only the outer r and t terminals are connected and the g terminal is unconnected. the TISP3700F3 limits the voltage between the two connection nodes to 1400 v with voltage limiting beginning above 1000 v. two TISP3700F3 devices connected in series would allow insulation testing to 2000 v ( 1400 vrms ). the protector consists of two symmetrical voltage-triggered bidirectional thyristors with a common connection. overvoltages are normally caused by a.c. power system or lightning flash disturbances which are coupled on to the system. these overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. this low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. the high crowbar holding current prevents d.c. latchup as the diverted current subsides. the tisp3x00f3 is guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. how to order device package carrier order # tisp3600f3 sl, single-in-line tube tisp3600f3sl TISP3700F3 sl, single-in-line tube TISP3700F3sl device symbol sl package (top view) 1 2 3 t g r mdxxaga g tr sd3xaa terminals t, r and g correspond to the alternative line designators of a, b and c
tisp3600f3, TISP3700F3 dual bidirectional thyristor overvoltage protectors 2 november 1997 - revised september 2000 product information absolute maximum ratings, t a = 25 c (unless otherwise noted) rating symbol value unit repetitive peak off-state voltage, (r-g or t-g value) tisp3600f3 TISP3700F3 v drm 420 500 v non-repetitive peak on-state pulse current (see notes 1 and 2) i ppsm a 2/10 (telcordia gr-1089-core, 2/10 voltage wave shape) 190 1/20 (itu-t k.22, 1.2/50 voltage wave shape, 25 ? resistor) 100 8/20 (iec 61000-4-5, combination wave generator, 1.2/50 voltage wave shape) 175 10/160 (fcc part 68, 10/160 voltage wave shape) 110 4/250 (itu-t k.20/21, 10/700 voltage wave shape, simultaneous) 95 5/310 (itu-t k.20/21, 10/700 voltage wave shape, single) 70 5/320 (fcc part 68, 9/720 voltage wave shape, single) 70 10/560 (fcc part 68, 10/560 voltage wave shape) 50 10/1000 (telcordia gr-1089-core, 10/1000 voltage wave shape) 45 non-repetitive peak on-state current (see notes 1 and 2) i tsm 6a 50/60 hz, 1 s initial rate of rise of on-state current, linear current ramp, maximum ramp value < 38 a di t /dt 250 a/s junction temperature t j -40 to +150 c storage temperature range t stg -65 to +150 c notes: 1. initially the tisp must be in thermal equilibrium with t j =25c. 2. these non-repetitive rated currents are peak values of either polarirty. the rated current values may be applied to the r or t terminals. additionally, both r and t terminals may have their rated current values applied simultaneously (in this case the g terminal return current will be the sum of the currents applied to the r and t terminals). the surge may be repeated after the tisp returns to its initial conditions. recommended operating conditions min typ max unit r1, r2 series resistor for gr-1089-core first-level surge survival series resistor for itu-t recommendation k.20 and k.21 series resistor for fcc part 68 9/720 survival series resistor for fcc part 68 10/160, 10/560 survival 15 0 0 10 ? electrical characteristics for the t and r terminals, t a = 25c parameter test conditions min typ max unit i drm repetitive peak off-state current v d = 2v drm 10 a v (bo) breakover voltage dv/dt = 700 v/ms, r source = 300 ? tisp3600f3 TISP3700F3 1200 1400 v i (bo) breakover current dv/dt = 700 v/ms, r source = 300 ? 0.1 a i h holding current i t = 5 a, di/dt = +/-30 ma/ms 0.15 a dv/dt critical rate of rise of off-state voltage linear voltage ramp, maximum ramp value < 1.7v drm 5 kv/s i d off-state current v d =50v 10 a c off off-state capacitance f = 100 khz, v d =1v rms, v d = 0, (see note 3) 0.1 pf note 3: these capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. the third termin al is connected to the guard terminal of the bridge.
3 november 1997 - revised september 2000 tisp3600f3, TISP3700F3 dual bidirectional thyristor overvoltage protectors product information electrical characteristics for the t and g or the r and g terminals, t a = 25 c parameter test conditions min typ max unit i drm repetitive peak off-state current v d = v drm 5 a v (bo) breakover voltage dv/dt = 700 v/ms, r source =300 ? tisp3600f3 TISP3700F3 600 700 v i (bo) breakover current dv/dt = 700 v/ms, r source =300 ? 0.1 a i h holding current i t = 5 a, di/dt = +/-30 ma/ms 0.15 a dv/dt critical rate of rise of off-state voltage linear voltage ramp, maximum ramp value < 0.85v drm 5 kv/s i d off-state current v d =50v 10 a c off off-state capacitance f = 100 khz, v d =1v rms, v d = 0, (see note 4) f = 100 khz, v d =1v rms, v d =-50v 44 11 74 20 pf note 4: these capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. the third termin al is connected to the guard terminal of the bridge. thermal characteristics parameter test conditions min typ max unit r ja junction to free air thermal resistance eia/jesd51-3 pcb, i t = i tsm(1000) , t a = 25 c, (see note 5) 50 c/w note 5: eia/jesd51-2 environment and pcb has standard footprint dimensions connected with 5 a rated printed wiring track widths.
tisp3600f3, TISP3700F3 dual bidirectional thyristor overvoltage protectors 4 november 1997 - revised september 2000 product information parameter measurement information figure 1. voltage-current characteristic for r-g and t-g terminal pairs figure 2. voltage-current characteristic for r-t terminal pair -v i h i tsm i tsp v drm i drm v d v (bo) i (bo) i d quadrant i switching characteristic +v + i v (bo) i (bo) v drm i drm v d i d i h i tsm i tsp -i quadrant iii switching characteristic pmxxah -v v drm i drm v d i h i tsm i tsp v (bo) i (bo) i d q ua d ran t i switching characteristic +v +i v (bo) i (bo) v d i d i h i tsm i tsp -i quadrant iii switching characteristic pmxxaj v drm i drm
5 november 1997 - revised september 2000 tisp3600f3, TISP3700F3 dual bidirectional thyristor overvoltage protectors product information typical characteristics figure 3. figure 4. figure 5. off-state current t j - junction temperature - c -25 0 25 50 75 100 125 150 i d - off-state current - a 0001 001 01 1 10 100 tc3laf junction temperature vs v d = -50 v v d = 50 v normalised breakover voltage vs junction temperature t j - junction temperature - c -25 0 25 50 75 100 125 150 normalised breakover voltage 0.95 1.00 1.05 1.10 tc3maia holding current vs junction temperature t j - junction temperature - c -25 0 25 50 75 100 125 150 i h - holding current - a 0.2 0.3 0.4 0.5 0.1 tc3laha
tisp3600f3, TISP3700F3 dual bidirectional thyristor overvoltage protectors 6 november 1997 - revised september 2000 product information thermal information figure 6. non-repetitive peak on-state current vs current duration t - current duration - s 01 1 10 100 1000 i tsm(t) - non-repetitive peak on-state current - a 1.5 2 3 4 5 6 7 8 9 15 20 1 10 ti4faa v gen = 1500 v rms, 50/60 hz r gen = 1.4*v gen /i tsm(t) eia/jesd51-2 environment eia/jesd51-3 pcb, t a = 25 c simultaneous operation of r and t terminals. g terminal current = 2xi tsm(t)
7 november 1997 - revised september 2000 tisp3600f3, TISP3700F3 dual bidirectional thyristor overvoltage protectors product information applications information iec 60950, en 60950, ul 1950 and csa 22.2 no.950 the ?950 family of standards have certain requirements for equipment (eut) with incoming lines of telecommunication network voltage (tnv). any protector from a tnv conductor to protective ground must have a voltage rating of at least 1.6 times the equipment rated supply voltage (figure 7). the intent is to prevent the possibility of the a.c. mains supply voltage from feeding into the telecommunication network and creating a safety hazard. international and european equipment usually have maximum rated voltage of 230 v rms, 240 v rms or 250 v rms. multiplying the 250 v value by 1.6 gives a protector v drm value of 400 v. allowing for operation down 0 c gives a v drm requirement of 420 v at 25 c. this need is met by the tisp3600f3. system insulation protection some wired systems are not directly connected to ground and are either floating or have a high resistance to ground. induced transients may cause high voltages relative to ground resulting in arcing across insulation at wiring junctions. arcing often leaves carbonised tracks which can degrade the system performance. where the system is carrying a power feed, current conduction through the carbonised track may cause a safety hazard. in figure 8, a low-protector, th1, from a tisp4xxx series limits the differential conductor voltage of the system. the use of a diode bridge, d1 through d4, reduces the capacitive loading of the protectors on the figure 7. ?950 tnv network insulation from protective ground figure 8. system insulation protection ac supply protective ground connection eut insulation overvoltage protection bridging insulation telecommunication network connection th2 tisp3600f3 th1 ai3xac tisp 4xxx system conductors d3 d4 d1 d2 th1 ai3xab d7 d8 d5 d6 tisp 3x00f3 th3 th2 tisp 3x00f3
tisp3600f3, TISP3700F3 dual bidirectional thyristor overvoltage protectors 8 november 1997 - revised september 2000 product information system and can be extended to protect more conductors as shown by the dotted diodes d5 and d6. low voltage diodes can be used as the maximum reverse voltage stress is limited to the v (bo) value of the tisp4xxx protector plus the diode forward recovery voltage. steering diodes d7 and d8 and high-voltage protector th2 limit the conductor voltage to ground. the limiting voltage is set by the choice of protector, tisp3600f3, 1200 v or TISP3700F3, 1400 v, and the number connected in series (one extra protector th3 shown dotted). bod replacement figure 9a shows a traditional overvoltage protection scheme for a high power switching thyristor, th1. the protection voltage level is set by a bod (breakover diode) thyristor. potentially damaging voltage transients cause the bod to crowbar which turns on thyristor th1. the on state of thyristor th1 causes the current drawn by the load from the d.c. voltage supply +v to continuously increase until the fast acting fuse f1 operates. resistor r1 limits the peak bod current and diode d1 protects the unidirectional bod against reverse polarity voltage. resistor r2 provides a d.c. return and with capacitor c1 forms a low pass network to prevent false triggering from noise. further trigger voltage discrimination and isolation is given by the series combination of zener diode d2 and reverse blocking diode d3. capacitor c2 and resistor r3 form the normal snubber network for the thyristor th1. figure 9b shows the tisp3x00f3 replacing the unidirectional bod and reverse polarity protection diode, d1. reverse polarity protection is not needed for the tisp3x00f3 as it is bidirectional. figure 9. thyristor protection c1 d1 bod d2 d3 r1 r2 c2 r3 load f1 th1 gate drive c1 tisp 3x00f3 d2 d3 r1 r2 c2 r3 load f1 th1 gate drive +v +v a) b) ai3xaa
9 november 1997 - revised september 2000 tisp3600f3, TISP3700F3 dual bidirectional thyristor overvoltage protectors product information mechanical data sl003 3-pin plastic single-in-line package this single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic com- pound. the compound will withstand soldering temperature with no deformation, and circuit performance charac- teristics will remain stable when operated in high humidity conditions. leads require no additional cleaning or processing when used in soldered assembly. all linear dimensions in millimeters and paranthetically in inches 2,54 (0.100) typical (see note a) 2 places 8,31 (0.327) max sl003 4,267 (0.168) min 1,854 (0.073) max 0,711 (0.028) 0,559 (0.022) 3 places 12,9 (0.492) max 6,60 (0.260) 6,10 (0.240) 2 1 3 0,356 (0.014) 0,203 (0.008) 3,40 (0.134) 3,20 (0.126) 9,75 (0.384) 9,25 (0.364) notes: a. each pin centreline is located within 0,25 (0.010) of its true longitudinal position. b. body molding flash of up to 0,15 (0.006) may occur in the package lead plane. mdxxcea index notch
tisp3600f3, TISP3700F3 dual bidirectional thyristor overvoltage protectors 10 november 1997 - revised september 2000 product information mechanical data device symbolization code devices will be coded as below. device symbolization code tisp3600f3 sp3600f3 TISP3700F3 sp3700f3
11 november 1997 - revised september 2000 tisp3600f3, TISP3700F3 dual bidirectional thyristor overvoltage protectors product information important notice power innovations limited (pi) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. pi warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with pi's standard warranty. testing and other quality control techniques are utilized to the extent pi deems necessary to support t his warranty. specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. pi assumes no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of pi covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. pi semiconductor products are not designed, intended, authorised, or warranted to be suitable for use in life-support applications, devices or systems. copyright ? 2000, power innovations limited

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